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| NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high-speed, power switching in inductive circuits where fall-time is critical. They are particularly suited for line operated switch-mode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Power Dissipation (TC = +100C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Vclamp = 500V VCEX(sus) Collector Cutoff Current ICEV ICER Emitter Cutoff Current ON Characteristics (Note 3) DC Current Gain hFE VCE(sat) VCE = 5V, IC = 5A VCE = 5V, IC = 10A Collector-Emitter Saturation Voltage IC = 10A, IB = 500mA IC = 10A, IB = 500mA, TC = +100C IC = 20A, IB = 2A Base-Emitter Saturation Voltage VBE(sat) VF hfe Cob td tr ts tf tsv tc tsv tc IC = 10A Peak, Vclamp = 250V, IB1 = 500mA, VBE(off) = 5V, TC = +100C IC = 10A Peak, Vclamp = 250V, IB1 = 500mA, VBE(off) = 5V, TC = +25C IC = 10A, IB = 500mA IC = 10A, IB = 500mA, TC = +100C Diode Forward Voltage Dynamic Characteristics Small-Signal Current Gain Output Capacitance VCE = 10V, IC = 1A, ftest = 1MHz VCB = 50V, IE = 0, ftest = 100kHz VCC = 250V, IC = 10A, IB1 = 500mA, VBE(off) = 5V, tp = 50s, Duty Cycle 2% 8 100 - - - 325 pF s s s s s s s s IF = 5A, Note 3 40 30 - - - - - - - - - - - - - 3 400 300 2.0 2.5 3.5 2.5 2.5 5 V V V V V V IEBO IC = 2A, Vclamp = 500V, TC = +100C IC = 5A, Vclamp = 500V, TC = +100C VCEV = 700V, VBE(off) = 1.5V VCEV = 700V, VBE(off) = 1.5V, TC = +150C VCE= 700V, RBE= 50, TC = +100C VEB = 2V, IC = 0 500 500 375 - - - - - - - - - - - - - - 0.25 5.0 5.0 175 V V V mA mA mA mA Symbol Test Conditions Min Typ Max Unit Switching Characteristics (Resistive Load) Delay Time Rise Time Storage Time Fall Time - - - - 0.12 0.25 0.5 0.8 0.2 1.5 2.0 0.6 Switching Characteristics (Inductive Load, Clamped) Storage Time Crossover Time Storage Time Crossover Time - - - - 1.5 0.36 0.8 0.18 3.5 1.6 - - Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%. Note 3. The internal Collector-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (VF) of this diode is comparable to that of typical fast recovery rectifiers. C B E .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE98
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